PIC16F676-I Datasheet, PDF (92/132 Pages) Microchip Technology – 14-Pin, Flash-Based 8-Bit CMOS Microcontrollers

PIC16F630/676
12.5 DC Characteristics: PIC16F630/676-E (Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40C  TA  +125C for extended
Param
No.
Device Characteristics
Min
Typ†
Max Units
VDD
Conditions
Note
D020E Power-down Base Current — 0.00099 3.5 A
(IPD)
— 0.0012 4.0 A
— 0.0029 8.0 A
D021E
—
0.3 6.0 A
—
1.8 9.0 A
—
8.4
20 A
D022E
—
58
70 A
2.0 WDT, BOD, Comparators, VREF,
3.0 ^{and T1OSC disabled}
5.0
2.0 WDT Current⁽¹⁾
3.0
5.0
3.0 BOD Current⁽¹⁾
D023E
D024E
D025E
— 109 130 A
—
3.3
10 A
—
6.1
13 A
— 11.5 24 A
—
58
70 A
—
85 100 A
— 138 165 A
—
4.0
10 A
—
4.6
12 A
5.0
2.0 Comparator Current⁽¹⁾
3.0
5.0
2.0 CVREF Current⁽¹⁾
3.0
5.0
2.0 T1 OSC Current⁽¹⁾
3.0
D026E
—
6.0
20 A
— 0.0012 6.0 A
5.0
3.0 A/D Current⁽¹⁾
— 0.0022 8.5 A
5.0
† Data in “Typ” column is at 5.0V, 25C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral  current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
DS40039F-page 92
 2010 Microchip Technology Inc.