PIC16F676-I Datasheet, PDF (90/132 Pages) Microchip Technology – 14-Pin, Flash-Based 8-Bit CMOS Microcontrollers

PIC16F630/676
12.3 DC Characteristics: PIC16F630/676-I (Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40C  TA  +85C for industrial
Param
No.
Device Characteristics
Min Typ† Max Units
VDD
Conditions
Note
D020 Power-down Base Current — 0.99 700 nA
(IPD)
— 1.2 770 nA
— 2.9 995 nA
D021
— 0.3 1.5 A
— 1.8 3.5 A
— 8.4 17 A
D022
— 58 70 A
2.0 WDT, BOD, Comparators, VREF,
3.0 ^{and T1OSC disabled}
5.0
2.0 WDT Current⁽¹⁾
3.0
5.0
3.0 BOD Current⁽¹⁾
D023
D024
D025
— 109 130 A
— 3.3 6.5 A
— 6.1 8.5 A
— 11.5 16 A
— 58 70 A
— 85 100 A
— 138 160 A
— 4.0 6.5 A
— 4.6 7.0 A
5.0
2.0 Comparator Current⁽¹⁾
3.0
5.0
2.0 CVREF Current⁽¹⁾
3.0
5.0
2.0 T1 OSC Current⁽¹⁾
3.0
D026
— 6.0 10.5 A
— 1.2 755 nA
5.0
3.0 A/D Current⁽¹⁾
— 0.0022 1.0 A
5.0
† Data in “Typ” column is at 5.0V, 25C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral  current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
DS40039F-page 90
 2010 Microchip Technology Inc.