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PIC24HJ128GP206-I Datasheet, PDF (238/286 Pages) Microchip Technology – High-Performance, 16-Bit Microcontrollers
PIC24HJXXXGPX06/X08/X10
23.1 DC Characteristics
TABLE 23-1: OPERATING MIPS VS. VOLTAGE
Characteristic
VDD Range
(in Volts)
Temp Range
(in °C)
DC5
3.0-3.6V
-40°C to +85°C
Max MIPS
PIC24HJXXXGPX06/X08/X10
40
TABLE 23-2: THERMAL OPERATING CONDITIONS
Rating
PIC24HJXXXGPX06/X08/X10
Operating Junction Temperature Range
Operating Ambient Temperature Range
Power Dissipation:
Internal chip power dissipation:
PINT = VDD x (IDD – Σ IOH)
I/O Pin Power Dissipation:
I/O = Σ ({VDD – VOH} x IOH) + Σ (VOL x IOL)
Maximum Allowed Power Dissipation
Symbol Min
Typ
Max Unit
TJ
-40
—
+125
°C
TA
-40
—
+85
°C
PD
PINT + PI/O
W
PDMAX
(TJ – TA)/θJA
W
TABLE 23-3: THERMAL PACKAGING CHARACTERISTICS
Characteristic
Symbol Typ Max Unit Notes
Package Thermal Resistance, 100-pin TQFP (14x14x1 mm)
θJA
48.4
—
°C/W
1
Package Thermal Resistance, 100-pin TQFP (12x12x1 mm)
θJA
52.3
—
°C/W
1
Package Thermal Resistance, 64-pin TQFP (10x10x1 mm)
θJA
38.3
—
°C/W
1
Note 1: Junction to ambient thermal resistance, Theta-JA (θJA) numbers are achieved by package simulations.
TABLE 23-4: DC TEMPERATURE AND VOLTAGE SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
Param
No.
Symbol
Characteristic
Min Typ(1) Max Units
Conditions
Operating Voltage
DC10 Supply Voltage
VDD
3.0
— 3.6
V
DC12 VDR
RAM Data Retention Voltage(2) 1.1 1.3 1.8
V
DC16 VPOR VDD Start Voltage(4)
—
— Vss V
to ensure internal
Power-on Reset signal
DC17
DC18
SVDD
VCORE
VDD Rise Rate
to ensure internal
Power-on Reset signal
VDD Core(3)
Internal regulator voltage
0.03 — — V/ms 0-3.0V in 0.1s
2.25 — 2.75 V Voltage is dependent on load,
temperature and VDD
Note 1: Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
2: This is the limit to which VDD can be lowered without losing RAM data.
3: These parameters are characterized but not tested in manufacturing.
4: VDD Core voltage must remain at VSS for a minimum of 200 µs to ensure POR.
DS70175F-page 236
© 2007 Microchip Technology Inc.