PIC16F628-20P Datasheet, PDF (133/170 Pages) Microchip Technology – FLASH-Based 8-Bit CMOS Microcontroller

PIC16F62X
17.1 DC Characteristics: PIC16F62X-04 (Commercial, Industrial, Extended)
PIC16F62X-20 (Commercial, Industrial, Extended)
PIC16LF62X-04 (Commercial, Industrial)
PIC16LF62X-04
(Commercial, Industrial)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ Ta ≤ +85°C for industrial and
0°C ≤ Ta ≤ +70°C for commercial
PIC16F62X-04
PIC16F62X-20
(Commercial, Industrial, Extended)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ Ta ≤ +85°C for industrial and
0°C ≤ Ta ≤ +70°C for commercial and
-40°C ≤ Ta ≤ +125°C for extended
Param
No.
Sym
Characteristic/Device
Min
Typ†
Max
Units
Conditions
D020
IPD Power Down Current*^{(2), (3)}
PIC16LF62X —
—
0.20
2.0
0.20
2.2
µA VDD = 2.0
µA VDD = 5.5
D020
PIC16F62X —
—
—
—
∆IWDT WDT Current⁽⁴⁾
—
∆IBOD Brown-out Detect Current⁽⁴⁾
—
D023 ∆ICOMP Comparator Current for each
—
Comparator⁽⁴⁾
∆IVREF VREF Current⁽⁴⁾
—
∆IWDT WDT Current⁽⁴⁾
—
D023
∆IBOD Brown-out Detect Current⁽⁴⁾
—
∆ICOMP Comparator Current for each
—
Comparator⁽⁴⁾
∆IVREF VREF Current⁽⁴⁾
—
0.20
2.2
0.20
5.0
0.20
9.0
2.70
15.0
6.0
15
75
125
30
50
135
6.0
20
25
75
125
30
50
135
µA VDD = 3.0
µA VDD = 4.5*
µA VDD = 5.5
µA VDD = 5.5 Extended
µA VDD = 3.0V
µA BOD enabled, VDD = 5.0V
µA VDD = 3.0V
µA VDD = 3.0V
µA VDD = 4.0V, Commercial,
Industrial
µA VDD = 4.0V, Extended
µA BOD enabled, VDD = 5.0V
µA VDD = 4.0V
µA VDD = 4.0V
Legend: Rows with standard voltage device data only are shaded for improved readability.
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C, unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and
switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-
sumption.
The test conditions for all IDD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with
the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS.
4: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the
base IDD or IPD measurement.
5: For RC osc configuration, current through REXT is not included. The current through the resistor can be estimated by the
formula Ir = VDD/2REXT (mA) with REXT in kΩ.
 2003 Microchip Technology Inc.
Preliminary
DS40300C-page 131