PIC16LF819-I Datasheet, PDF (131/176 Pages) Microchip Technology – Enhanced Flash Microcontrollers with nanoWatt Technology

PIC16F818/819
15.4 DC Characteristics: PIC16F818/819 (Industrial, Extended)
PIC16LF818/819 (Industrial) (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Operating voltage VDD range as described in Section 15.1 “DC
Characteristics: Supply Voltage”.
Param
No.
Sym
Characteristic
Min
Typ† Max Units
Conditions
VOL Output Low Voltage
D080
I/O ports
—
— 0.6
V IOL = 8.5 mA, VDD = 4.5V,
-40°C to +125°C
D083
OSC2/CLKO
(RC oscillator config)
—
— 0.6
V IOL = 1.6 mA, VDD = 4.5V,
-40°C to +125°C
VOH Output High Voltage
D090
I/O ports (Note 3)
VDD – 0.7
—
—
V IOH = -3.0 mA, VDD = 4.5V,
-40°C to +125°C
D092
OSC2/CLKO
(RC oscillator config)
VDD – 0.7
—
—
V IOH = -1.3 mA, VDD = 4.5V,
-40°C to +125°C
Capacitive Loading Specs on Output Pins
D100 COSC2 OSC2 pin
—
—
15
pF In XT, HS and LP modes
when external clock is used
to drive OSC1
D101 CIO All I/O pins and OSC2
(in RC mode)
—
—
50
pF
D102 CB _{SCL, SDA in I}²_{C™ mode}
—
— 400 pF
Data EEPROM Memory
D120 ED Endurance
100K
1M — E/W -40°C to +85°C
10K
100K — E/W +85°C to +125°C
D121 VDRW VDD for read/write
VMIN
— 5.5
V Using EECON to read/write,
VMIN = min. operating
voltage
D122 TDEW Erase/write cycle time
—
4
8
ms
Program Flash Memory
D130 EP Endurance
10K
100K — E/W -40°C to +85°C
1K
10K — E/W +85°C to +125°C
D131 VPR VDD for read
VMIN
— 5.5
V
D132A
VDD for erase/write
VMIN
— 5.5
V Using EECON to read/write,
VMIN = min. operating
voltage
D133 TPE Erase cycle time
—
2
4
ms
D134 TPW Write cycle time
—
2
4
ms
† Data in “Typ” column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: In RC oscillator configuration, the OSC1/CLKI pin is a Schmitt Trigger input. It is not recommended that the
PIC16F818/819 be driven with external clock in RC mode.
2: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels
represent normal operating conditions. Higher leakage current may be measured at different input voltages.
3: Negative current is defined as current sourced by the pin.
 2004 Microchip Technology Inc.
DS39598E-page 129