PIC16LF819-I Datasheet, PDF (119/176 Pages) Microchip Technology – Enhanced Flash Microcontrollers with nanoWatt Technology

PIC16F818/819
15.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Ambient temperature under bias............................................................................................................ -40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to VSS (except VDD and MCLR) ................................................... -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS ............................................................................................................ -0.3 to +7.5V
Voltage on MCLR with respect to VSS (Note 2) .............................................................................................-0.3 to +14V
Total power dissipation (Note 1) ..................................................................................................................................1W
Maximum current out of VSS pin ...........................................................................................................................200 mA
Maximum current into VDD pin ..............................................................................................................................200 mA
Input clamp current, IIK (VI < 0 or VI > VDD) .......................................................................................................... ±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD) ...................................................................................................±20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA ........................................................................................................................100 mA
Maximum current sourced by PORTA...................................................................................................................100 mA
Maximum current sunk by PORTB........................................................................................................................100 mA
Maximum current sourced by PORTB ..................................................................................................................100 mA
Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD – ∑ IOH} + ∑ {(VDD – VOH) x IOH} + ∑(VOL x IOL)
2: Voltage spikes at the MCLR pin may cause latch-up. A series resistor of greater than 1 kΩ should be used
to pull MCLR to VDD, rather than tying the pin directly to VDD.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
 2004 Microchip Technology Inc.
DS39598E-page 117