MAX11014 Datasheet, PDF (3/69 Pages) Maxim Integrated Products – Automatic RF MESFET Amplifier Drain-Current Controllers

Automatic RF MESFET Amplifier
Drain-Current Controllers
ELECTRICAL CHARACTERISTICS (continued)
(V_GATEVSS = V_AVSS = -5.5V to -4.75V, V_AVDD = +4.75V to +5.25V, V_DVDD = +2.7V to V_AVDD, external V_REFADC = +2.5V, external
V_REFDAC = +2.5V, C_REFADC = C_REFDAC = 0.1µF, V_OPSAFE1 = V_OPSAFE2 = 0, V_RCS1+ = V_RCS2+ = +5V, C_FILT1 = C_FILT3 = 1nF, C_FILT2 =
C_FILT4 = 1nF, V_AGND = V_DGND = 0, V_ADCIN0 = V_ADCIN1 = 0, V_ACLAMP1 = V_ACLAMP2 = -5V, T_J = T_MIN to T_MAX, unless otherwise noted.
All typical values are at T_J = +25°C.)
PARAMETER
CLASS AB OUTPUT CHANNEL
SYMBOL
CONDITIONS
MIN
TYP MAX UNITS
Untrimmed Offset
Offset Temperature Coefficient
(Note 1)
50
µV
0
mV/^oC
Gain
-2
Gain Error
GATE-DRIVE AMPLIFIER/INTEGRATOR
Output Gate-Drive Voltage Range
(Note 2)
V_GATE
I_GATE = -1mA
I_GATE = +1mA
I_GATE = -10mA
I_GATE = +10mA
0.1
%
V_GATEVSS +
1
V
-0.15 -4
mV
V_GATEVSS +
V
1.2
-1
-20
mV
Gate Voltage Settling Time—
MAX11015
t_GATE
Settles to within ±0.5% of final value, R_S =
50Ω, C_GATE = 15µF, see GATE Output
Resistance vs. GATE Voltage in the Typical
Operating Characteristics
1.1
ms
Output Capacitive Load (Note 3)
Gate Voltage Noise
Maximum Power-On Transient
Output Short-Circuit Current Limit
Output Safe Switch On-
Resistance
C_GATE
I_SC
R_OPSW
No series resistance, R_S = 0Ω
R_S = 500Ω
RMS noise, 1kHz to 1MHz
C_LOAD = 1nF
Sinking or sourcing
Clamp GATE1 to ACLAMP1, GATE2 to
ACLAMP2 (Note 4)
0
0.5
nF
0
15,000
250
nV/√Hz
±100
mV
±25
mA
3.6
kΩ
ADC DC ACCURACY
Resolution
Differential Nonlinearity
Integral Nonlinearity
Offset Error
Gain Error
Gain Temperature Coefficient
Offset Temperature Coefficient
DNL_ADC No missing codes
INL_ADC (Note 5)
(Note 6)
12
Bits
±1
LSB
±1.25 LSB
±2
±4
LSB
±2
±4
LSB
±0.4
ppm/^oC
±0.4
ppm/^oC
Channel-to-Channel Offset
Matching
±0.1
LSB
Channel-to-Channel Gain
Matching
±0.1
LSB
_______________________________________________________________________________________ 3