IS61NVVP25672 Datasheet, PDF (8/29 Pages) Integrated Silicon Solution, Inc – 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM

IS61NVVP25672
IS61NVVP51236
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
TOPR
Operating Temperature
Com
Ind
–0 to +70
°C
-40 to +85
TSTG
PD
IOUT
Storage Temperature
Power Dissipation
Output Current (per I/O)
–65 to +150
°C
1.6
W
100
mA
VIN, VOUT Voltage Relative to GND for I/O Pins
–0.5 to VCCQ + 0.3 V
VIN
Voltage Relative to GND for
for Address and Control Inputs
–0.5 to VCCQ + 0.3 V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specifi-
cation is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or
electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
ISSI ^®
OPERATING RANGE
Range
Commercial
Ambient Temperature
0°C to +70°C
Industrial
-40°C to +85°C
VCC
1.8V ± 5%
1.8V ± 5%
VCCQ
1.8V ± 5%
1.8V ± 5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
1.8V
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –4.0 mA
VCCQ –0.4 —
V
VOL
Output LOW Voltage
IOL = 4.0 mA
—
0.4
V
VIH
Input HIGH Voltage
1.1 VCC + 0.3
V
VIL
Input LOW Voltage
–0.3
0.6
V
ILI
Input Leakage Current
GND ≤ VIN ≤ VCC⁽¹⁾
–5
5
µA
ILO
Output Leakage Current GND ≤ VOUT ≤ VCCQ, OE = VI
–10
10
µA
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
ADVANCED INFORMATION Rev. 00A
07/17/02