IS61WV12816DALL_11 Datasheet, PDF (5/21 Pages) Integrated Silicon Solution, Inc – 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
AC TEST CONDITIONS
Parameter
Unit
Unit
Unit
1
(2.4V-3.6V)
(3.3V + 5%)
(1.65V-2.2V)
Input Pulse Level
0.4V to VDD - 0.3V
0.4V to VDD - 0.3V
0.4V to VDD - 0.3V
Input Rise and Fall Times
1V/ ns
1V/ ns
1V/ ns
2
Input and Output Timing
VDD /2
VDD + 0.05
0.9V
and Reference Level (VRef)
2
Output Load
R1 ( Ω )
See Figures 1 and 2
1909
See Figures 1 and 2
317
See Figures 1 and 2
13500
3
R2 ( Ω )
1105
351
10800
VTM (V)
3.0V
3.3V
1.8V
4
AC TEST LOADS
OUTPUT
ZO = 50Ω
50Ω
VDD/2
30 pF
Including
jig and
scope
5
R1
VTM
OUTPUT
6
5 pF
Including
jig and
scope
R2
7
Figure 1.
Figure 2.
8
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com
5
Rev. D
06/21/2011