IS61WV12816DALL_11 Datasheet, PDF (16/21 Pages) Integrated Silicon Solution, Inc – 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
HIGH SPEED (IS61WV12816DALL/DBLL)
DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V)
Symbol Parameter
Test Condition
Options
Min.
VDR
VDD for Data Retention
See Data Retention Waveform
2.0
IDR
Data Retention Current
VDD = 2.0V, CE ≥ VDD – 0.2V
Com.
—
Ind.
—
Auto.
tSDR
Data Retention Setup Time See Data Retention Waveform
0
tRDR
Recovery Time
See Data Retention Waveform
tRC
Note 1: Typical values are measured at VDD = 3.0V, TA = 25^OC and not 100% tested.
Typ.⁽¹⁾ Max. Unit
—
3.6 V
10
50 μA
—
70
100
—
— ns
—
— ns
DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V)
Symbol Parameter
Test Condition
Options
Min.
VDR
VDD for Data Retention
See Data Retention Waveform
1.2
IDR
Data Retention Current
VDD = 1.2V, CE ≥ VDD – 0.2V
Com.
—
Ind.
—
Auto.
—
tSDR
Data Retention Setup Time See Data Retention Waveform
0
tRDR
Recovery Time
See Data Retention Waveform
tRC
Note 1: Typical values are measured at VDD = 1.8V, TA = 25^OC and not 100% tested.
Typ.⁽¹⁾ Max. Unit
—
3.6 V
10
50 μA
—
70
— 100
—
— ns
—
— ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
16
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
06/21/2011