IS61WV12816DALL_11 Datasheet, PDF (17/21 Pages) Integrated Silicon Solution, Inc – 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
LOW POWER (IS61WV12816DALS/DBLS)
DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V)
1
Symbol Parameter
Test Condition
Options
Min.
Typ.⁽¹⁾ Max. Unit
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 2.0V, CE ≥ VDD – 0.2V
Com.
Ind.
Auto.
2.0
—
3.6 V
—
20
40 μA
2
—
—
50
75
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
0
tRC
—
— ns
—
— ns
3
Note 1: Typical values are measured at VDD = 3.0V, TA = 25^OC and not 100% tested.
4
DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V)
Symbol Parameter
Test Condition
Options
Min.
Typ.⁽¹⁾ Max. Unit
VDR
VDD for Data Retention
See Data Retention Waveform
1.2
—
3.6 V
5
IDR
Data Retention Current
VDD = 1.2V, CE ≥ VDD – 0.2V
Com.
Ind.
Auto.
tSDR
Data Retention Setup Time See Data Retention Waveform
—
20
40 μA
—
—
50
—
—
75
6
0
—
— ns
tRDR
Recovery Time
See Data Retention Waveform
tRC
—
— ns
Note 1: Typical values are measured at VDD = 1.8V, TA = 25^OC and not 100% tested.
7
DATA RETENTION WAVEFORM (CE Controlled)
8
VDD
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com
17
Rev. D
06/21/2011