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IS66WVC4M16ALL Datasheet, PDF (19/67 Pages) Integrated Silicon Solution, Inc – Mixed Mode supports asynchronous write and synchronous read operation
IS66WVC4M16ALL
IS67WVC4M16ALL
Figure 10: Configuration Register READ
– Synchronous Mode Followed by Data READ
CLK
tCLK
tABA
Address
DQ0-
DQ15
Select
Control
Register2
tSP tHD
ADV#
tSP
tHD
tCSP
tABA
CE#
tSP
UB#/LB#
WE#
tSP tHD
OE#
tCEW
HiZ
WAIT
tHD
CRE4
VALID
ADDRESS
tACLK tKOH tSP tHD
CR
valid
tACLK tKOH
VALID VALID VALID VALID
OUTPUTOUTPUTOUTPUTOUTPUT
tCBPH3
tCEM
tHD
tKTHL
tCEW
tBOE
tKHTL
tOHZ
tHZ
tSP
Notes:
1. Non-default BCR settings for configuration register READ in synchronous mode, followed by READ ARRAY
operation: Latency code three (four clocks); WAIT active LOW; WAIT asserted during delay.
2. A[19:18] = 00b to read RCR, 10b to read BCR, to 01b to read DIDR.
3. CE# must remain LOW to complete a burst-of-one READ. WAIT must be monitored additional WAIT
cycles caused by refresh collisions require a corresponding number of additional CE# LOW cycles.
4. CRE must be HIGH to access registers.
Rev. B | July 2012
www.issi.com – SRAM@issi.com
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