TLE8262-2E Datasheet, PDF (91/94 Pages) Infineon Technologies AG – Universal System Basis Chip

TLE8262-2E
Application Information
Table 26
Pin
Vs
PIN in Factory Flash Mode
Level
typ. 4.5V
Vcc1µC
RO
INT
LH
SDO
CLK, SDI
CSN
TxDCAN, TxDLIN1,
TxDLIN2, TxDLIN3
RxDCAN, RxDLIN1,
RxDLIN2, RxDLIN3
5V ± 2%
Pull-up resistor
Pull-up resistor
High impedance
High impedance
Pull-down resistor
Pull-up resistor
Pull-up resistor
High impedance
Comment
Voltage output from SBC. No voltage applied from
external.
To be applied from external
Can be driven from external
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
16.3
ESD Tests
Tests for ESD robustness according to IEC61000-4-2 “gun test” (150pF, 330Ω) have been performed. The results
and test condition is available in a test report. The values for the test are listed in Table 27 below.
Table 27 ESD “Gun test”
Performed Test
Result
Unit
ESD at pin CANH, CANL, > 8
kV
BUSx, Vs versus GND
Remarks
positive pulse¹⁾
ESD at pin CANH, CANL, < -8
kV
BUSx, Vs versus GND
negative pulse
1) ESD susceptibility “ESD GUN” contact discharge (R=330Ohm C=150pF) (DIN EN 61000-4-2) tested according LIN EMC
1.3 Test Specification and ICT EMC Evaluation of CAN Transceiver. Tested by external test house (IBEE Zwickau, EMC
Test report Nr. 06-02-09a)
Data Sheet
91
Rev. 1.0, 2009-05-26