PTFC270101M_15 Datasheet, PDF (9/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFC270101M
Typical RF Performance, 920 – 960 MHz (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 960 MHz.
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
25
70
24
60
Gain
23
50
22
40
21
30
20
20
Efficiency
19
10
18
c270101m-900-gr1c
0
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 920 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270101m-900-gr2a
5
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
45
Efficiency
-35
35
-45
25
-55
15
-65
c270101m-900-gr2b
5
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 960 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270101m-900-gr2c
5
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Data Sheet
9 of 21
Rev. 04, 2015-04-01