PTFC270101M_15 Datasheet, PDF (2/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFC270101M
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 120 mA
Symbol Min Typ
V(_BR)DSS
65
—
I_DSS
—
—
I_DSS
—
—
I_GSS
—
1
R_DS(on)
—
1
V_GS
2.2
2.7
Max
—
1
10
—
—
3.2
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 12 W CW)
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
4.04
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Unit
V
µA
µA
µA

V
Unit
V
V
V
°C
°C
°C/W
ESD Ratings
Test Type
Human Body Model (HBM)
Charge Device Model (CDM)
Rated Class
1A

Standard
ANSI/ESDA/JEDEC JS-001
JESD 22-C101
Ordering Information
Type
PTFC270101M V1 R1K
Order Code
Package and Description
PTFC270101MV1R1KXUMA1 PG-SON-10, molded plastic, SMD
Shipping
Tape & Reel, 1000 pcs
Data Sheet
2 of 21
Rev. 04, 2015-04-01