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PTFC270101M_15 Datasheet, PDF (14/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor | |||
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PTFC270101M
RF Characteristics
Two-carrier WCDMA Characteristics (not subject to production test)
VDD = 28 V, IDQ = 120 mA, POUT = 1.3 W avg, Æ1 = 2650 MHz, Æ2 = 2660 MHz,
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min Typ
Gain
Drain Efï¬ciency
Intermodulation Distortion
Gps
â
18.2
ï¨D
â
19.7
IMD
â
â45
Typical RF Performance, 2620 â 2690 MHz (data taken in production test fixture)
Max
â
â
â
Unit
dB
%
dBc
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, Æ = 2620 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
20
60
19
50
Gain
18
40
17
30
16
20
Efficiency
15
10
14
24
27
30
33
36
39
c270101m-2.6-gr1a
0
42
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, Æ = 2655 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
20
60
19
50
18
40
Gain
17
30
16
Efficiency 20
15
10
14
24
27
30
33
36
39
c270101m-2.6-gr1b
0
42
Output Power (dBm)
Data Sheet
14 of 21
Rev. 04, 2015-04-01
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