PTFC270101M_15 Datasheet, PDF (5/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFC270101M
Typical RF Performance, 2110 – 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-10
2170 IMD-U
2140 IMD-U
-20
2110 IMD-U
2170 IMD-L
2140 IMD-L
2110 IMD-L
-30
-40
-50
c270101m-2.1-gr3
24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 120 mA
24
66
22 Gain
54
20
42
18
30
Efficiency
16
2110 MHz
2140 MHz
18
2170 MHz
14
c270101m-2.1-gr4
6
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Small Signal CW Performance
Gain and Input Return Loss
V_DD = 28 V, I_DQ = 120 mA
22
0
Gain
21
-5
20
-10
19
-15
18
17
1975
-20
2075
Input Return Loss
2175
c270101m-2.1-gr6_v2
-25
2275
Frequency (MHz)
Data Sheet
5 of 21
Rev. 04, 2015-04-01