PTFC270101M_15 Datasheet, PDF (15/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFC270101M
Typical RF Performance, 2620 – 2690 MHz (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
20
60
19
50
Gain
18
40
17
30
16
Efficiency 20
15
10
14
24
27
30
33
36
39
c270101m-2.6-gr1c
0
42
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
55
IMD Low
IMD Up
-25
ACPR
45
Efficiency
-35
35
-45
25
-55
15
-65
24
27
30
33
36
39
c270101m-2.6-gr2a
5
42
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
55
IMD Low
IMD Up
-25
ACPR
45
Efficiency
-35
35
-45
25
-55
15
-65
24
27
30
33
36
39
c270101m-2.6-gr2b
5
42
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
55
IMD Low
IMD Up
-25
45
ACPR
Efficiency
-35
35
-45
25
-55
15
-65
24
27
30
33
36
39
c270101m-2.6-gr2c
5
42
Output Power (dBm)
Data Sheet
15 of 21
Rev. 04, 2015-04-01