PTFC270101M_15 Datasheet, PDF (11/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFC270101M
Typical RF Performance, 920 – 960 MHz (cont.)
CW Performance
at selected supply voltage
I_DQ = 120 mA, ƒ = 940 MHz
26
78
24 ^Gain
66
22
54
V_DD = 24 V
20
V_DD = 28 V
V_DD = 32 V
42
18
30
16
14
24
Efficiency
28
32
36
40
Output Power (dBm)
18
c270101m-900-gr5b
6
44
CW Performance
at selected supply voltage
I_DQ = 120 mA, ƒ = 960 MHz
26
78
24 Gain
66
22 V_DD = 24 V
54
V_DD = 28 V
20 ^{VDD = 32 V}
42
18
30
16
14
24
Efficiency
28
32
36
40
Output Power (dBm)
18
c270101m-900-gr5c
6
44
Broadband Circuit Impedance
Freq
[MHz]
920
940
960
Z Source 
R
jX
2.5
3.8
2.5
4.0
2.5
4.3
Z Load 
R
jX
16.3
3.0
16.3
3.2
16.3
3.4
Z Source
D
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA
Class AB
Freq
Zs
[MHz]
[
920 2.02 + j3.96
940 2.78 + j4.60
960 2.22 + j3.69
Zl
[]
13.8 – j1.0
15.2 – j2.1
16.1 – j3.3
Max Output Power
Gain
[dB]
P_OUT
[dBm]
P_OUT
[W]
24.0 42.3 16.98
23.7 42.1 16.22
23.4 42.2 16.6
P_1dB
PAE
Zl
[%]
[]
62.3
15.7 + j8.1
60.5
17.5 + j8.4
57.7
16.5 + j8.1
Max PAE
Gain
P_OUT P_OUT
PAE
[dB] [dBm] [W]
[%]
26.0 40.7 11.75 70.1
25.7 40.3 10.72 67.8
25.7 40.3 10.72 65.8
Data Sheet
11 of 21
Rev. 04, 2015-04-01