PTFC270101M_15 Datasheet, PDF (8/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFC270101M
RF Characteristics
Two-carrier WCDMA Characteristics (not subject to production test)
V_DD = 28 V, I_DQ = 120 mA, P_OUT = 1.3 W avg, ƒ₁ = 947.5 MHz, ƒ₂ = 957.5 MHz,
3GPP WCDMA signal, 3.84 MHz channel bandwidth, 8 dB peak/average @ 0.01% CCDF
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
—
23
_D
—
20
IMD
—
–39
Typical RF Performance, 920 – 960 MHz (data taken in production test fixture)
Max
—
—
—
Unit
dB
%
dBc
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 920 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
25
70
24
60
Gain
23
50
22
40
21
30
20
20
19
10
Efficiency
18
c270101m-900-gr1a
0
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
25
70
24
60
Gain
23
50
22
40
21
30
20
20
Efficiency
19
10
18
c270101m-900-gr1b
0
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Data Sheet
8 of 21
Rev. 04, 2015-04-01