PTFC270101M_15 Datasheet, PDF (4/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFC270101M
Typical RF Performance, 2110 – 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA, ƒ = 2170 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
-5
65
IMD Low
-15
IMD Up
55
ACPR
-25
Efficiency
45
-35
35
-45
25
-55
15
-65
c270101m-2.1-gr2c
5
24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
at selected supply voltage
I_DQ = 120 mA, ƒ = 2110 MHz
24
66
22 ^Gain
54
20
42
18
30
Efficiency
16
VDD = 24 V
18
VDD = 28 V
VDD = 32 V
14
c270101m-2.1-gr5a
6
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
CW Performance
at selected supply voltage
I_DQ = 120 mA, ƒ = 2140 MHz
24
66
Gain
22
54
20
42
18
30
Efficiency
16
VDD = 24 V
18
VDD = 28 V
VDD = 32 V
14
c270101m-2.1-gr5b
6
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
CW Performance
at selected supply voltage
I_DQ = 120 mA, ƒ = 2170 MHz
24
66
22 _Gain
54
20
42
18
30
Efficiency
16
VDD = 24 V
18
VDD = 28 V
VDD = 32 V
14
c270101m-2.1-gr5c
6
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
Data Sheet
4 of 21
Rev. 04, 2015-04-01