PTFC270101M_15 Datasheet, PDF (6/21 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor

PTFC270101M
Broadband Circuit Impedance
Freq
[MHz]
2110
2140
2170
Z Source 
R
jX
2.1
–6.7
2.1
–6.5
2.1
–6.3
Z Load 
R
jX
5.6
–6.1
5.6
–5.8
5.6
–5.5
Z Source
D
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 120 mA
Class AB
Freq
Zs
[MHz]
[]
2110
2.1 – 6.1
2140
2.1 – 6.5
2170
2.1 – 6.6
Zl
[]
7.15 – 7.2
6.54 – 7.6
7.2 – 7.9
Max Output Power
Gain
[dB]
P_OUT
[dBm]
P_OUT
[W]
19.4 42.06 16.07
19.2 42.05 16.03
19.3 41.93 15.6
P_1dB
PAE
Zl
[%]
[]
59.5
4.8 – 4
59.3
5.14 – 4.4
58.2
5.2 – 4.8
Max PAE
Gain
P_OUT P_OUT
PAE
[dB] [dBm] [W]
[%]
21
40.81 12.05 66.8
21
40.92 12.36 65.8
21
40.84 12.13 64.6
Reference Circuit, 2100 MHz
DUT
PTFC270101M V1
Reference Circuit No.
LTN/PTFC270101M V1
Order Code
PCB
LTNPTFC270101MV1TOBO1
Rogers RO4350, 0.508 mm [.020"] thick, 2 oz. copper, _r = 3.66
Find Gerber files for this reference fixture on the Infineon Web site at www.infineon.com/rfpower
Data Sheet
6 of 21
Rev. 04, 2015-04-01