PTFA211801E Datasheet, PDF (9/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

PTFA211801E
PTFA211801F
Package Outline Specifications
Package H-36260-2
45° X 2.03
[.080]
2X 12.70
[.500]
CL
4X R 1.52
[.060]
(2X 4.83±0.50
[.190±.020])
LID
13.21
+0.10
–0.15
[.520 ^{+–.0.00064}]
CL
D
S
2X 3.25
[.128]
FLANGE 13.72
[.540]
23.37±0.51
[.920±.020]
2X 1.63
[.064] R
G
27.94
[1.100]
SPH 1.57
[.062]
22.35±0.23
[.880±.009]
CL
4.11±0.38
[.162±.015]
1.02
[.040]
34.04
[1.340]
0.0381 [.0015] -A-
2 6 0 -c a s e s _ 3 0 2 6 0 /1 1 -1 5 -0 7
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
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Data Sheet
9 of 11
Rev. 04, 2007-11-15