PTFA211801E Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

PTFA211801E
PTFA211801F
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
Description
The PTFA211801E and PTFA211801F are thermally-enhanced,
180-watt, internally matched LDMOS FETs intended for WCDMA
applications. They are characaterized for single- and two-carrier
WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced
packaging provides the coolest operation available.
PTFA211801E
Package H-36260-2
PTFA211801F
Package H-37260-2
2-Carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1.2 A, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-25
30
Efficiency
-30
25
-35
IM3
20
-40
15
-45
10
-50
ACPR
5
-55
0
34 36 38 40 42 44 46 48
Average Output Power (dBm)
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 180 W
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 35 W average
ƒ₁ = 2135 MHz, ƒ₂ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
14.5 15.5
—
dB
η_D
26
27.5
—
%
IMD
—
–36
–34
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 04, 2007-11-15