PTFA211801E Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

PTFA211801E
PTFA211801F
RF Characteristics (cont.)
CW Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 150 W average, f = 2170 MHz
Characteristic
Gain Compression
Symbol Min Typ
Max
Unit
G_comp
—
0.5
1.0
dB
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
—
15.5
η_D
—
38.5
IMD
—
–28
Max
—
—
—
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.2 A
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 150 W CW)
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
565
3.23
–40 to +150
0.31
Unit
V
V
°C
W
W/°C
°C
°C/W
Data Sheet
2 of 11
Rev. 04, 2007-11-15