PTFA211801E Datasheet, PDF (8/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

Reference Circuit (cont.)
LM
+
10
35V
RF_IN
PTFA211801E
PTFA211801F
RF_OUT
Reference circuit assembly diagram* (not to scale)
Component
C1, C2, C3
C4
C5, C6
C7
C8, C12, C16
C9
C10, C21
C11
C13, C17
C14, C18
C15, C19
C20
Q1
QQ1
R1
R2
R3
R4
R5, R9
R6, R7, R8
Description
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Capacitor, 0.01 µF
Ceramic capacitor, 9.1 pF
Ceramic capacitor, 0.5 pF
Ceramic capacitor, 8.2 pF
Ceramic capacitor, 1.5 pF
Ceramic capacitor, 0.02 µF
Ceramic capacitor, 1 µF
Electrolytic capacitor, 22 µF, 50 V
Ceramic capacitor, 0.3 pF
Transistor
Voltage regulator
Chip resistor, 1.2 k-ohms
Chip resistor, 1.3 k-ohms
Chip resistor, 2 k-ohms
Potentiometer, 2 k-ohms
Chip resistor, 10 ohms
Chip resistor, 5.1 k-ohms
Suggested Manufacturer
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Digi-Key
ATC
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
*Gerber Files for this circuit available on request
Data Sheet
8 of 11
A211801ef _assy
P/N or Comment
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT
200B103
100B 9R1
100B 0R5
100B 8R2
100B 1R5
200B 203
920C105
PCE3374CT-ND
100B 0R3
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
3224W-202ETR-ND
P10ECT-ND
P5.1KECT-ND
Rev. 04, 2007-11-15