PTFA211801E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

Typical Performance (cont.)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 1.2 A, f = 2170 MHz
T_CASE = 25°C
17
T_CASE = 90°C
60
Efficiency
16
47
Gain
15
34
14
21
13
0
8
20 40 60 80 100 120 140 160 180
Output Power (W)
PTFA211801E
PTFA211801F
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1.2 A, f = 2170 MHz
18
17
16 ^Gain
60
Efficiency
50
40
15
30
14
20
13
10
12
0
0
20 40 60 80 100 120 140 160 180
Output Power (W)
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V I_DQ = 1.2 A, f = 2140 MHz,
P_OUT = 51 dBm PEP
-20
-25 _{3rd Order}
-30
-35
-40
5th
-45
7th
-50
-55
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
2-Tone Drive-up
V_DD = 28 V, I_DQ = 1.2 A,
f = 2140 MHz, tone spacing = 1 MHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
38
45
40
Efficiency
35
IM3 ³⁰
IM5
25
20
15
10
IM7
5
0
42
46
50
54
Output Power, PEP (dBm)
Data Sheet
4 of 11
Rev. 04, 2007-11-15