PTFA211801E Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

PTFA211801E
PTFA211801F
Reference Circuit
C1
0.001µF
R1.23K_V
1R.12K V
LQMQ71805
QB1CP56
VDD
C0.2001µF _C0.3001µF
R2K3 _V
R4
2K V
R5
10V
1C04µF
35V
R5.61K _V
5R.18K V
0C.51µF 5R.71KV 0C.61µF .C017µF
9C.81pF _l7
C12
9.1pF
C13
C14
0.02µF 1µF
C15
22µF
50V
RF_IN
C10
8.2pF
l1
l2
l3
l4
l5
C9
0.5pF
C11
1.5pF
1R09V
l8
DUT
l6
l10 l11 l12
l9
C21
8.2pF
l13
l14
C20
0.3pF
VDD
RF_OUT
C16
9.1pF
C17
0.02µF
1Cµ1F8
C19
22µF
50V
A211801ef_sch
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PTFA211801E or PTFA211801F
PCB
0.76 mm [.030"] thick, ε_r = 4.5
LDMOS Transistor
Rogers TMM4
2 oz. copper
Microstrip
Electrical Characteristics at 2140 MHz¹
l1
0.097 λ, 50.0 Ω
l2
0.267 λ, 50.0 Ω
l3
0.136 λ, 42.0 Ω
l4
0.087 λ, 42.0 Ω
l5
0.018 λ, 11.4 Ω
l6
0.077 λ, 6.9 Ω
l7
0.207 λ, 48.0 Ω
l8, l9
0.256 λ, 45.0 Ω
l10
0.087 λ, 5.0 Ω
l11 (taper)
0.073 λ, 5.0 Ω / 40.0 Ω
l12
0.019 λ, 40.0 Ω
l13
0.087 λ, 50.0 Ω
l14
0.403 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
7.37 x 1.40
19.86 x 1.40
10.24 x 1.85
6.50 x 1.85
1.24 x 10.24
5.23 x 17.78
15.70 x 1.50
19.30 x 1.65
5.84 x 25.40
5.59 x 25.40 / 1.98
1.45 x 1.98
6.65 x 1.40
30.73 x 1.40
Dimensions: L x W (in.)
0.290 x 0.055
0.782 x 0.055
0.403 x 0.073
0.256 x 0.073
0.049 x 0.403
0.206 x 0.700
0.618 x 0.059
0.760 x 0.065
0.230 x 1.000
0.220 x 1.000 / 0.078
0.057 x 0.078
0.262 x 0.055
1.210 x 0.055
Data Sheet
7 of 11
Rev. 04, 2007-11-15