PTFA211801E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

PTFA211801E
PTFA211801F
Ordering Information
Type and Version
PTFA211801E V4
PTFA211801F V4
Package Type
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Typical Performance (data taken in a production test fixture)
Marking
PTFA211801E
PTFA211801F
Two-carrier WCDMA at Various Biases
V_DD = 28 V, f = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
-35
1.3 A 1.4 A
-40
-45
1.2 A
1.1 A
-50
-55
34 36 38 40 42 44 46 48
Output Power, Avg. (dBm)
Broadband Performance
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 45.0 dBm CW
30
-5
Efficiency
25
-10
Return
20
Loss
-15
15
Gain
-20
10
-25
5
-30
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Data Sheet
3 of 11
Rev. 04, 2007-11-15