PTFA211801E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

Typical Performance (cont.)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1.2 A, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-30
35
Efficiency
30
-35
Gain
25
ACPR Low
20
-40
15
-45
-50
34
ACPR Up
36 38 40 42 44 46
Average Output Power (dBm)
10
5
0
48
PTFA211801E
PTFA211801F
Voltage Sweep
I_DQ = 1.2 A, f = 2140 MHz, P_OUT = 51 dBm PEP,
tone spacing = 1 MHz
-10
45
-15
-20
IM3 Up
-25
-30
40
Efficiency
35
30
25
-35
20
-40
15
Gain
-45
10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.3 A
0.9 A
1.5 A
2.3 A
4.5 A
6.8 A
9.0 A
11.3 A
13.5 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 04, 2007-11-15