PTFA211801E Datasheet, PDF (10/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz

Package Outline Specifications (cont.)
Package H-37260-2
45° X 2.031
[.080]
2X 12.70
[.500]
CL
D
2x 4.83±0.50
[.190±.020]
PTFA211801E
PTFA211801F
13.72
[.540]
LID
13.21
+0.10
–0.15
[.520 ^{+–..000064}]
CL
23.37±0.51
[.920±.020]
G
LID 22.35±0.23
[.880±.009]
4X R 0.89
[R.035] MAX
1.02
[.040]
S
FLANGE 23.11
[.910]
SP[H.016.25]7
4.11±0.38
[.162±.015]
0 . 0 3 8 1 [.0 0 1 5 ] -A-
260-cases_31260_11-15-07
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
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Data Sheet
10 of 11
Rev. 04, 2007-11-15