HYS72V16300GR Datasheet, PDF (9/22 Pages) Infineon Technologies AG – PC133 Registered SDRAM-Modules

HYS 72Vxx3xxGR
PC133 Registered SDRAM-Modules
Operating Currents per SDRAM Component
T_A = 0 to 70 °C ¹⁾, V_DD = 3.3 V ± 0.3 V
Parameter
Test Condition Symbol 64
Mb
Operating current
–
128 256 512 Unit Note
Mb Mb Mb
max.
2)
t_RC = t_RC(MIN.), t_CK = t_CK(MIN.)
Outputs open, Burst Length = 4,
CL = 3. All banks operated in
random access, all banks
operated in ping-pong manner
to maximize gapless data
access
Precharge stand-by current
in Power Down Mode
t_CK = min.
I_CC1
110 160 270 tbd. mA
I_CC2P
2
1.5 2
tbd. mA ²⁾
CS = V_IH(MIN.), CKE ≤ V_IL(MAX.)
Precharge Stand-by Current
in Non-Power Down Mode
t_CK = min.
I_CC2N
40 40 25 tbd. mA ²⁾
CS = V_{IH (MIN.)}, CKE ≥ V_IH(MIN.)
No operating current
t_CK = min., CS = V_IH(MIN.),
active state (max. 4 banks)
CKE ≥ V_IH(MIN.)
CKE ≤ V_IL(MAX.)
Burst operating current
–
t_CK = min.,
Read command cycling
Auto refresh current
–
t_CK = min.,
Auto Refresh command cycling
Self refresh current
–
Self Refresh Mode,CKE = 0.2 V
I_CC3N
I_CC3P
I_CC4
I_CC5
I_CC6
50 50 50 tbd. mA ²⁾
8 10 10 tbd. mA ²⁾
2), 3)
70 100 170 tbd. mA
140 230 240 tbd. mA ²⁾
1 1.5 2.5 tbd. mA ²⁾
INFINEON Technologies
9
2002-07-18