HYS72V16300GR Datasheet, PDF (11/22 Pages) Infineon Technologies AG – PC133 Registered SDRAM-Modules

HYS 72Vxx3xxGR
PC133 Registered SDRAM-Modules
AC Characteristics (SDRAM Device Specification) (cont’d) ^{4), 5)}
T_A = 0 to 70 °C ¹⁾; V_SS = 0 V; V_DD = 3.3 V ± 0.3 V, t_T = 1 ns
Parameter
Symbol
Limit Values
-7
PC133-222
-7.5
PC133-333
min. max. min. max.
Unit Note
Refresh Cycle
Refresh Period
t_REF
64&128MBit SDRAM Based Modules
–
256&512MBit SDRAM Based Modules
–
Self Refresh Exit Time
t_SREX
1
Read Cycle
Data Out Hold Time
t_OH
3
Data Out to Low Impedance Time
t_LZ
0
Data Out to High Impedance Time
t_HZ
3
DQM Data Out Disable Latency
t_DQZ
–
Write Cycle
Data Input to Precharge
(write recovery)
DQM Write Mask Latency
t_WR
2
t_DQW
0
15.6 –
7.8 –
–
1
–
3
–
0
7
3
2
–
–
2
–
0
15.6
7.8
–
–
µs
µs
CLK ⁶⁾
–
ns –
–
ns
7)
7
ns
7)
2
CLK –
–
CLK –
–
CLK –
INFINEON Technologies
11
2002-07-18