BFP740ESD_12 Datasheet, PDF (9/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

3
Maximum Ratings
BFP740ESD
Maximum Ratings
Table 3-1 Maximum Ratings at T_A = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Max.
Collector emitter voltage
V_CEO
Open base
–
4.2
V
T_A = 25 °C
–
3.7
V
T_A = -55 °C
Collector emitter voltage¹⁾
V_CBO
Open emitter
–
4.9
V
T_A = 25 °C
–
4.4
V
T_A = -55 °C
Collector emitter voltage²⁾
V_CES
E-B short circuited
–
4.2
V
T_A = 25 °C
–
3.7
V
T_A = -55 °C
Base current³⁾
I_B
-10
5
mA –
Collector current
I_C
–
45
mA –
RF input power⁴⁾
P_RFin
–
21
dBm –
ESD stress pulse⁵⁾
V_ESD
-2
2
kV HBM, all pins, acc. to
JESD22-A114
Total power dissipation⁶⁾
P_tot
–
160
mW T_S ≤ 98 °C
Junction temperature
T_J
–
150
°C –
Storage temperature
T_Stg
-55
150
1) Low V_CBO due to integrated protection circuits
2) V_CES is identical to V_CEO due to integrated protection circuits.
3) Sustainable reverse bias current is high due to integrated protection circuits.
°C –
4) RF input power is high due to integrated protection circuits.
5) ESD robustness is high due to integrated protection circuits.
6) T_S is the soldering point temperature. T_S is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.1, 2012-10-08