BFP740ESD_12 Datasheet, PDF (14/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740ESD
Electrical Characteristics
Table 5-6 AC Characteristics, V_CE = 3 V, f = 1.5 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
23.5 –
28
–
22
–
25.5 –
0.6
–
23
–
10
–
24.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 25 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 25 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Table 5-7 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
22.5 –
26.5 –
21
–
24
–
0.6
–
21
–
10
–
25
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 25 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 25 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Data Sheet
14
Revision 1.1, 2012-10-08