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| BFP740ESD_12 Datasheet, PDF (17/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor | |||
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5.4
Characteristic DC Diagrams
BFP740ESD
Electrical Characteristics
50
IB = 225µA
40
IB = 205µA
IB = 185µA
IB = 165µA
30
IB = 145µA
IB = 125µA
IB = 105µA
20
IB = 85µA
IB = 65µA
IB = 45µA
10
IB = 25µA
0
IB = 5µA
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE [V]
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA
1000
100
0.1
1
10
IC [mA]
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
Data Sheet
17
100
Revision 1.1, 2012-10-08
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