BFP740ESD_12 Datasheet, PDF (15/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740ESD
Electrical Characteristics
Table 5-8 AC Characteristics, V_CE = 3 V, f = 2.4 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
22
–
25.5 –
19.5 –
22
–
0.65 –
20
–
10.5 –
25
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 25 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 25 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Table 5-9 AC Characteristics, V_CE = 3 V, f = 3.5 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
20.5 –
23
–
17
–
19
–
0.7
–
16.5 –
10.5 –
24.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 25 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 25 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Data Sheet
15
Revision 1.1, 2012-10-08