BFP740ESD_12 Datasheet, PDF (24/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740ESD
Electrical Characteristics
1
1.5
0.5
0.4
0.3
0.2
10
10
9
9
2
3
4
5
8
0.1
8
0.03 to 10 GHz
10
7
0
0.1 0.2 0.3 0.470.5 ⁶
1 1.5 2 3 4 5
5
6
4
−0.1
5
3
−10
−0.2
−0.3
−0.4
4
2
1
3
2
−5
−4
1
−3
−0.5
−2
−1.5
−1
Figure 5-15 Output Matching S₂₂ = f (f), V_CE = 3 V, I_C = 6 / 25 mA
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
II_CC
=
=
25mA
6.0mA
0
0
2
4
6
8
f [GHz]
Figure 5-16 Noise Figure NF_min = f (f), V_CE = 3 V, I_C = 6 / 25 mA, Z_S = Z_opt
25 mA
6 mA
10
Data Sheet
24
Revision 1.1, 2012-10-08