BFP740ESD_12 Datasheet, PDF (23/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740ESD
Electrical Characteristics
0.5
0.4
0.3
0.2
0.1
8
7
76
65
54
3
0
0.1 0.2 ^40.3 0.4 0.5
1
1.5
10
10
99
8
2
3
4
5
0.03 to 10 GHz
10
1 1.5 2 3 4 5
−0.1
2
3
−0.2
1
−0.3
−0.4
2
−0.5
−1
−10
−5
−4
−3
1
−2
−1.5
Figure 5-13 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 25 mA
25 mA
6 mA
1
0.5
0.4
0.3
2.4GHz
0.2
1.5
2
3
1.9GHz
4
0.9GHz
5
0.1
0.45GHz 10
0
0.1 0.2 0.3 0.4 0.5
5.5GHz
−0.1
−0.2
−0.3
−0.4
−0.5
10GHz
1 1.5 2
I = 25mA
c
3 45
I_c = 6.0mA
−10
−5
−4
−3
−2
−1.5
−1
Figure 5-14 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 25 mA
Data Sheet
23
Revision 1.1, 2012-10-08