BFP740ESD_12 Datasheet, PDF (12/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740ESD
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, T_A = 25 °C
Electrical Characteristics
Top View
E
C
VC
Bias -T
OUT
VB
B
E
Bias-T
(Pin 1)
IN
Figure 5-1 BFP740ESD Testing Circuit
Table 5-3 AC Characteristics, V_CE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
34
–
38.5 –
25
–
34
–
0.55 –
30.5 –
9
–
23.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 6 mA
I_C = 25 mA
Z_S = Z_L = 50 Ω
I_C = 6 mA
I_C = 25 mA
Z_S = Z_opt
I_C = 6 mA
I_C = 6 mA
Z_S = Z_L = 50 Ω
I_C = 25 mA
I_C = 25 mA
Data Sheet
12
Revision 1.1, 2012-10-08