BFP740ESD_12 Datasheet, PDF (7/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP740ESD
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Product Brief
Product Brief
The BFP740ESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s
reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design
supports voltages up to V_CEO = 4.2 V and currents up to I_C = 45 mA. The device is especially suited for mobile
applications in which low power consumption is a key requirement. The typical transition frequency is
approximately 45 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier
applications. The transistor is fitted with internal protection circuits, which enhance the robustness against
electrostatic discharge (ESD) and high levels of RF input power. The device is housed in an easy to use plastic
package with visible leads.
Data Sheet
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Revision 1.1, 2012-10-08