BFP740ESD_12 Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Robust Low Noise Silicon Germanium Bipolar RF Transistor

5.5
Characteristic AC Diagrams
BFP740ESD
Electrical Characteristics
50
3 to 4V
45
2.5V
40
35
2V
30
25
20
15
10
1V
5
0
0
5
10 15 20 25 30 35 40
I_C [mA]
Figure 5-7 Transition Frequency f_T = f (I_C), f = 2 GHz, V_CE = Parameter in V
30
25
20
15
10
5
2V, 2.4GHz
3V, 2.4GHz
2V, 5.5GHz
0
3V, 5.5GHz
Figure 5-8
−5
0
5
10
15
20
25
30
35
I_C [mA]
3rd Order Intercept Point OIP₃ = f (I_C), Z_S = Z_L= 50 Ω, V_CE, f = Parameters
Data Sheet
20
Revision 1.1, 2012-10-08