HYB39L128160AC Datasheet, PDF (28/49 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM

HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
&Ã7ˆ…†‡ÃX …v‡rÃhqÃSrhqÐv‡uÃ6 ˆ‡‚ÃQ…rpuh…tr
& Ã7ˆ…†‡ÃX…v‡rÐv‡uÃ6 ˆ‡‚Q…rpuh…tr
7ˆ…†‡ÃGrt‡uÃ2Ã!Ã86TÃyh‡rp’Ã2Ã!Ã"Ã
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
CAS Latency = 2:
Command
Bank A
Active
DQ’s
CAS Latency = 3:
Command
Bank A
Active
DQ’s
NOP
Write A
Auto Precharge
NOP
NOP
t WR
DIN A0 DIN A1
NOP
*
NOP
t RP
Activate
NOP
NOP
NOP
Write A
Auto Precharge
NOP
NOP
t WR
DIN A0 DIN A1
NOP
*
NOP
t RP
NOP
* ^{Begin Auto Precharge}
Bank can be reactivated after trp
Activate
&!Ã7ˆ…†‡ÃSrhqÐv‡uÃ6 ˆ‡‚Q…rpuh…tr
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command
Read A
with AP
CAS
latency = 2
DQ’s
CAS
latency = 3
DQ’s
NOP
NOP NOP NOP NOP NOP
*
t _RP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
NOP
*
t RP
DOUT A0 DOUT A1 DOUT A2 DOUT A3
* ^{Begin Auto Precharge}
Bank can be reactivated after trp
NOP
SPT03721_2
INFINEON Technologies
28
2003-02