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HYB39L128160AC Datasheet, PDF (24/49 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM | |||
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HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
"ÃSrhqÃDÂÂrÂ
Â
ÂÂÂrqÃi ÃhÃSrhq
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command Read A Read B NOP NOP NOP NOP NOP NOP NOP
CAS
latency = 2
t CK2, DQâs
CAS
latency = 3
t CK3, DQâs
DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3
DOUT A0 DOUT B0 DOUT B1 DOUT B2 DOUT B3
SPT03713
#ÃSrhqÃÂÂÃXÂ
vÂrÃDÂÂrÂ
Âhy
# ÃSrhqÃÂÂÃXÂ
vÂrÃDÂÂrÂ
Âhy
(Burst Length = 4, CAS latency = 3)
T0
T1
T2
T3
T4
T5
CLK
Minimum delay between the Read and Write
Commands = 4 + 1 = 5 cycles
DQMx
t DQZ
Command NOP Read A NOP NOP NOP NOP
T6
T7
T8
Write latency t DQW of DQMx
Write B NOP NOP
DQâs
"H" or "L"
DOUT A0
DIN B0
Must be Hi-Z before
the Write Command
DIN B1
DIN B2
SPT03787
INFINEON Technologies
24
2003-02
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