HYB39L128160AC Datasheet, PDF (14/49 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM

HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
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Operating Case Temperature Range (commercial).........................................................0 to + 70°C
Storage Temperature Range ................................................................................... – 55 to + 150°C
Input/Output Voltage ......................................................................................... – 0.3 to 9_DD + 0.3 V
Power Supply Voltage 9_DD ...................................................................................... – 0.3 to + 3.6 V
Power Dissipation .................................................................................................................... 0.7 W
Data out Current (short circuit) ............................................................................................... 50 mA
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Recommended Operation and DC Characteristics
T_CASE = 0 to 70 °C (commercial)
V_SS = 0 V; V_DD = V_DDQ = 3.3 V ± 0.3 V
Parameter
Symbol
DRAM Core Supply Voltage
I/O Supply Voltage
Input High Voltage (CMD, Addr.)
Input Low Voltage (CMD, Addr.)
Data Input High (Logic 1) Voltage
Data Input Low (Logic 0) Voltage
Data Output High (Logic 1) Voltage
(I_OH=-0.1mA)
Date Output Low (Logic 0) Voltage
(I_OL=+0.1mA)
Input Leakage Current, any input
(0 V < V_IN < V_DDQ, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V < V_OUT < V_DD)
V_DD
V_DDQ
V_IH
V_IL
V_IH
V_IL
V_OH
V_OL
I_I(L)
I_O(L)
Limit Values
min.
max.
3.0
3.6
3.0
3.6
0.8 x V_DDQ V_DDQ + 0.3
– 0.3
+ 0.3
0.8 x V_DDQ V_DDQ + 0.3
– 0.3
+ 0.3
V_DDQ - 0.2 –
–
0.2
–5
5
–5
5
Unit Notes
V
V
V
1, 2
V
1, 2
V
V
V
V
µA
µA
I‚‡r†
1. All voltages are referenced to W_SS.
2. W_IH may overshoot to W_DD + 0.8V for pulse width of < 4 ns with 2.5V.ÃW_IL may undershoot to
– 0.8 V for pulse width < 4.0 ns with 2.5V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
INFINEON Technologies
14
2003-02