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HYB39L128160AC Datasheet, PDF (15/49 Pages) Infineon Technologies AG – 128-MBIT SYNCHRONOUS LOW-POWER DRAM
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HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
Capacitance :
TCASE = 0 to 70 °C
VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input Capacitance (CLK)
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output Capacitance (DQ)
Symbol
CI1
CI2
Values
min. max.
-
3.5
-
3.8
Unit
pF
pF
CIO
-
6.0 pF
Operating Currents
TCASE = 0 to 70 °C (commercial)
VDD = VDDQ = 3.3 V ± 0.3 V
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Symb. -7.5 -8
Unit Note
Operating current
tCK = tCK(MIN.)
one bank access
Precharge standby current
in Power Down Mode
CS = VIH (MIN.), CKE ≤ VIL(MAX.)
Precharge standby current
in Non Power Down Mode
CS = VIH (MIN.), CKE ≥ VIH(MIN.)
No operating current
tCK = min., CS = VIH (MIN.),
active state (max. 4 banks)
Burst Operating Current
tCK = min
Read command cycling
Auto Refresh Current
tCK = min, trc = trcmin.
Auto Refresh command cycling
Self Refresh Current
Self Refresh Mode
CKE = 0.2 V, tCK = infinity
–
tCK = min
ICC1
70 65
ICC2P 0.4
0.4
tCK = min
ICC2N 20
15
CKE ≥ VIH(MIN.) ICC3N 35
31
CKE ≤ VIL(MAX.) ICC3P 3
3
–
ICC4
70 60
–
ICC5 160 150
ICC6
350
mA 3,4
mA 3
mA 3
mA 3
mA 3
mA 3,4
mA
µA
INFINEON Technologies
15
2003-02
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