HYB39S512400AT Datasheet, PDF (21/28 Pages) Infineon Technologies AG – 512-Mbit Synchronous DRAM

HYB 39S512[40/80/16]0AT(L)
512-Mbit Synchronous DRAM
Electrical Characteristics
4
Electrical Characteristics
4.1
Operating Conditions
Table 7 Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Note/ Test Condition
min. max.
Voltage on I/O pins relative to V_SS
V_IN, V_OUT –1.0
+4.6
V
Power supply voltage
V_DD, V_DDQ –1.0
+4.6
V
Operating Temperature
T_A
0
+70
°C
Storage temperature range
T_STG
–55
+150
°C
Power dissipation per SDRAM component P_D
–
1
W
Data out current (short circuit)
I_OUT
–
50
mA
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 8 Input and Output Capacitances¹⁾
Parameter
Symbol
Values²⁾
Unit
min.
max.
Input Capacitance: CK, CK
C_I1
2.5
3.5
pF
Input capacitance
C_I2
2.5
3.8
pF
(A0-A12, BA0,BA1,RAS, CAS, WE, CS, CKE, DQM)
Input / Output capacitance (DQ)
C_I0
4.0
6.0
pF
1) T_A = 0 to 70 °C; V_DD, V_DDQ = 3.3 V ± 0.3 V, f = 1 MHz
2) Capacitance values are shown for TSOP-54 packages. Capacitance values for TFBGA packages are lower by 0.5 pF
Data Sheet
21
Rev. 1.3, 2004-03
10082003-L1GD-PVI5