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TC1793 Datasheet, PDF (179/189 Pages) Infineon Technologies AG – 32-Bit Single-Chip Microcontroller
TC1793
Electrical ParametersFlash Memory Parameters
5.4
Flash Memory Parameters
The data retention time of the TC1793’s Flash memory depends on the number of times
the Flash memory has been erased and programmed.
Table 46 FLASH32 Parameters
Parameter
Symbol
Min.
Data Flash Erase Time
per Sector
tERD CC −
Program Flash Erase
Time per 256 KByte
Sector
tERP CC −
Program time data flash tPRD CC −
per page2)
−
Values
Typ. Max.
−
4.21)
−
5
−
5.3
−
15.9
Program time program tPRP CC −
−
5.3
flash per page3)
−
−
10.6
Data Flash Endurance NE CC 60000 −
−
4)
Erase suspend delay
tFL_ErSusp −
−
15
CC
Wait time after margin
tFL_Margin 10
−
−
change
Del CC
Program Flash Retention tRET CC 20
−
−
Time, Physical Sector5)6)
Program Flash Retention tRETL CC 20
−
−
Time, Logical Sector5)6)
UCB Retention Time5)6) tRTU CC 20
−
−
Unit Note /
Test Condition
s
s
ms without
reprogramming
ms with two
reprogramming
cycles
ms without
reprogramming
ms with one
reprogramming
cycle
cycle Min. data
s retention time 5
years
ms
μs
year Max. 1000
s erase/program
cycles
year Max. 100
s erase/program
cycles
year Max. 4
s erase/program
cycles per UCB
Data Sheet
172
V 1.2, 2014-05