TLE9877QXA20_15 Datasheet, PDF (114/122 Pages) Infineon Technologies AG – Microcontroller with LIN and BLDC MOSFET Driver for Automotive Applications

TLE9877QXA20
Electrical Characteristics
Table 40 Electrical Characteristics MOSFET Driver (cont’d)
V_S = 5.5 V to 28 V, T_j = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit Note / Test Condition Number
Min. Typ. Max.
Fall time
Rise time
Fall time
Absolute rise - fall time
difference for all LSx
t_fallmax
t_risemin
t_fallmin
t_{r_f(diff)LSx}
100 250 450 ns
1.25 2.5 5
µs
1.25 2.5 5
µs
–
– 100 ns
C_Load = 10 nF,
V_SD > 8 V,
75-25%, I_CHARGE = I_DISCHG
= 31(max)
2)_{CLoad = 10 nF,}
V_SD > 8 V,
25-75%,
I_CHARGE = I_DISCHG = 3(min)
2)_{CLoad = 10 nF,}
V_SD > 8 V,
75-25%,
I_CHARGE = I_DISCHG = 3(min)
C_Load = 10 nF,
V_SD > 8 V,
25-75%, I_CHARGE = I_DISCHG
= 31(max)
P_12.1.58
P_12.1.14
P_12.1.15
P_12.1.35
Absolute rise - fall time
difference for all HSx
t_{r_f(diff)HSx}
–
–
100 ns C_Load = 10 nF,
P_12.1.36
V_SD > 8 V,
25-75%, I_CHARGE = I_DISCHG
= 31(max)
Resistor between GHx/GLx R_GGND
and GND
30 40 50 kΩ ²⁾–
P_12.1.11
Resistor between SHx and
GND
R_SHGN
30 40 50 kΩ ²⁾³⁾ This resistance is the P_12.1.10
resistance between GHx
and GND connected
through a diode to SHx. As
a consequence, the
voltage at SHx can rise up
to 0,6V typ. before it is
discharged through the
resistor.
Low RDSON mode
(boosted discharge mode)
R_ONCCP
–
9 12 Ω V_VSD = 13.5 V,
P_12.1.50
V_VCP = V_VSD + 14.0 V;
I_CHARGE = I_DISCHG =
31(max); 50mA forced into
Gx, Sx grounded
Resistance between VDH I_BSH
and VSD
–
4–
kΩ ²⁾
Input propagation time (LS t_P(ILN)min
–
1.5 3
µs C = 10 nF, (25%) /
on)
t ²⁾⁴⁾
SLEWon
P_12.1.24
P_12.1.37
Data Sheet
114
Rev. 1.0, 2015-04-30