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| ICS842S104 Datasheet, PDF (7/21 Pages) Integrated Device Technology – Crystal-to-HSTL 100MHz / 200MHz PCI Express™ Clock Synthesizer | |||
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ICS842S104 Data Sheet
CRYSTAL-TO- HSTL 100MHZ / 200MHZ PCI EXPRESS⢠CLOCK SYNTHESIZER
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
Item
Supply Voltage, VDD
Inputs, VI
XTAL_IN
Other Inputs
Outputs, IO
Continuous Current
Surge Current
Package Thermal Impedance, θJA
Storage Temperature, TSTG
Rating
4.6V
0V to VDD
-0.5V to VDD + 0.5V
50mA
100mA
77.5°C/W (0 mps)
-65°C to 150°C
DC Electrical Characteristics
Table 4A. Power Supply DC Characteristics, VDD = 3.3V ± 5%, VDDO = 1.5V to 2.0V, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
VDD
VDDA
VDDO
IDD
IDDA
IDDO
Positive Supply Voltage
Analog Supply Voltage
Output Supply Voltage
Power Supply Current
Analog Supply Current
Output Supply Current
3.135
3.3
VDD â 0.21
3.3
1.5
3.465
VDD
2.0
106
21
7
Units
V
V
V
mA
mA
mA
Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V ± 5%, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum
VIH
Input High Voltage
VIL
Input Low Voltage
IIH
Input High Current SDATA, SCLK
IIL
Input Low Current SDATA, SCLK
VDD = VIN = 3.465V
VDD = 3.465V, VIN = 0V
2
-0.3
-150
Typical
Maximum
VDD + 0.3
0.8
10
Units
V
V
µA
µA
Table 4C. HSTL DC Characteristics, VDD = 3.3V ± 5%, VDDO = 1.5V to 2.0V, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum
Typical
Maximum
Units
VOH
Output High Voltage; NOTE 1
VOL
Output Low Voltage; NOTE 1
VOX
Output Crossover Voltage;
NOTE 2
0.9
0
40% x (VOH - VOL) + VOL
1.2
V
0.4
V
65% x (VOH - VOL) + VOL %
VSWING
Peak-to-Peak Output Voltage
Swing
0.6
1.1
V
NOTE 1: Outputs terminated with 50⦠to GND.
NOTE 2: Defined with respect to output voltage swing at a given condition.
ICS842S104CG REVISION A MARCH 17, 2010
7
©2010 Integrated Device Technology, Inc.
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